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MMBTA63 [BL Galaxy Electrical]

PNP General Purpose Transistor; PNP通用晶体管
MMBTA63
型号： MMBTA63
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

PNP General Purpose Transistor
PNP通用晶体管

晶体 晶体管
文件： 总3页 (文件大小：143K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA63/MMBTA64  
FEATURES  
Pb  
Lead-free  
z
Epitaxial planar die construction.  
Complementary NPN type available  
(MMBTA13/MMBTA14).  
z
z
High current gain.  
APPLICATIONS  
z
Ideal for medium power amplification and switching  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMBTA63  
MMBTA64  
2U  
2V  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
collector-base voltage  
Value  
UNIT  
MMBTA63  
MMBTA64  
MMBTA63  
MMBTA64  
-30  
-30  
-30  
-30  
VCBO  
V
collector-emitter voltage  
VCEO  
V
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
Collector dissipation  
-10  
-0.3  
V
A
PC  
0.35  
W
RθJA  
Tj ,Tstg  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
357  
°C/W  
°C  
-55-150  
Document number: BL/SSSTC124  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA63/MMBTA64  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Test conditions  
MIN.  
MAX. UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
MMBTA63 IC=-100μA,IE=0  
-30  
-30  
-
-
V
V
MMBTA64  
Collector-emitter breakdown voltage  
MMBTA63  
V(BR)CEO  
IC=-0.1mA,IB=0  
-30  
-30  
MMBTA64  
Emitter-base breakdown voltage  
collector cut-off current  
V(BR)EBO  
ICBO  
IE=-100μA,IC=0  
IE = 0; VCB = -30V  
IE = 0; VCE = -10V  
-10  
-
V
-
-0.1  
-0.1  
μA  
μA  
ICEO  
collector cut-off current  
-
DC current gain  
MMBTA63 VCE = -5V; IC= -10mA  
5000  
10000  
10000  
20000  
MMBTA64  
MMBTA63  
MMBTA64  
V
V
V
CE = -5V;IC = -10mA  
CE = -5V;IC = -100mA  
CE = -5V;IC =-100mA  
hFE  
-
VCE(sat)  
fT  
collector-emitter saturation voltage  
transition frequency  
IC = -100mA; IB =-0.1mA  
-
-1.5  
-
V
IC =-10mA; VCE =-5.0V;  
f =100MHz  
125  
MHz  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Dim  
A
Min  
Max  
E
2.85  
1.25  
2.95  
1.35  
K
B
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
G
H
J
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
Document number: BL/SSSTC124  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA63/MMBTA64  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
MMBTA63/MMBTA64 SOT-23  
3000/Tape&Reel  
Document number: BL/SSSTC124  
Rev.A  
www.galaxycn.com  
3

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